si-doped undoped laser device gallium nitride wafer : one type of wide-gap compound semiconductor is gallium nitride. gallium nitride (gan) substrate is a single-crystal substrate of exceptional quality. it is created using the original hvpe method and wafer processing technology pioneered in china over a decade ago. high crystalline, outstanding homogeneity, and superior surface quality are characteristics.
Si Doped Undoped Laser Device Gallium Nitride Wafer
gallium nitride wafer applications
gan can be employed in a variety of applications, including led displays, high-energy detection and imaging, laser projection displays, power devices, and so on.
microwave devices with a high frequency high-energy detection and visualization
new hydrogen energy storage technology environmental monitoring and biological medicine
terahertz light source
power device, laser projection display, and so on. storage of dates
lighting that saves energy laser projections with full color fla display electronic gadgets with high efficiency
with our plant, we will deliver high-quality gan substrate and application technology to the industry.
high quality ganmaterial is a barrier to the application of iii-nitrides, such as long life and high stability lds, high power and high reliability micro-wave devices, and high brightness and high efficiency, energy-saving led.
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